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FJP3305 High Voltage Fast-Switching NPN Power Transistor
FJP3305
High Voltage Fast-Switching NPN Power Transistor
* High Voltage Capability * High Switching Speed * Suitable for Electronic Ballast and Switching Regulator
1
TO-220 2.Collector 3.Emitter
1.Base
Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current
TC = 25C unless otherwise noted
Parameter
Value
700 400 9 4 8 2 75 150 -65 ~ 150
Units
V V V A A A W C C
Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature
(c)2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJP3305 Rev. B
FJP3305 High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat)
TC = 25C unless otherwise noted
Parameter
Collector-Base Breakdwon Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage
Conditions
IC = 500A, IE = 0 IC = 5mA, IB = 0 IE = 500A, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCE = 10V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 125V, IC = 2A IB1 = -IB2 = 0.4A RL = 62.5
Min.
700 400 9
Typ.
Max
Units
V V V A A
1 1 19 8 35 40 0.5 0.6 1.0 1.2 1.6 4 65 0.8 4.0 0.9
V V V V V MHz pF s s s
VBE(sat) fT Cob tON tSTG tF
Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Storge Time Fall Time
* Pulse Test: PW 300s, Duty Cycle 2%
hFE Classification
Classification
hFE1
H1
19 ~ 28
H2
26 ~ 35
2 FJP3305 Rev. B
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FJP3305 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
5.0 4.5
Figure 2. DC Current Gain (R-Grade)
100
VCE = 5V
IB = 300mA
Ta = 125 C
O
IC [A], COLLECTOR CURRENT
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6
Ta = 75 C
O
hFE, DC CURRENT GAIN
Ta = - 25 C
10
O
Ta = 25 C
O
IB = 100mA IB = 50mA
7
8
9
10
1 0.01
0.1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CUTRRENT
Figure 3. DC Current Gain (O-Grade)
100
Figure 4. Saturation Voltage (R-Grade)
10
Ta = 125 C
O
Ta = 75 C
O
VCE(sat) [V], SATURATION VOLTAGE
VCE = 5V
IC = 4 IB
Ta = 125 C
1
O
hFE, DC CURRENT GAIN
Ta = - 25 C
10
O
Ta = 25 C
O
Ta = 75 C Ta = - 25 C
0.1
O
O
Ta = 25 C
O
1 0.01
0.1
1
10
0.01 0.01
0.1
1
10
IC [A], COLLECTOR CUTRRENT
IC [A], COLLECTOR CURRENT
Figure 5. Saturatin Voltage (O-Grade)
10
Figure 6. Saturation Voltage (R-Grade)
10
VCE(sat) [V], SATURATION VOLTAGE
Ta = 125 C
1
O
VBE(sat) [V], SATURATION VOLTAGE
IC = 4 IB
IC = 4 IB
1
Ta = - 25 C
O
Ta = 25 C
O
Ta = 75 C Ta = - 25 C
0.1
O
O
Ta = 125 C
O
Ta = 75 C
O
0.1
Ta = 25 C
O
0.01 0.01
0.1
1
10
0.01 0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
3 FJP3305 Rev. B
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FJP3305 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
Figure 7. Saturation Voltage (O-Grade)
10
(Continued)
Figure 8. Switching Time
10
VCE(sat) [V], SATURATION VOLTAGE
IC = 4 IB
1 Ta = - 25 C
O
Ta = 25 C
O
tF & tSTG [s], SWITCHING TIME
tSTG
1
Ta = 125 C
O
Ta = 75 C
O
tF
0.1
0.1
IB1 = - IB2 = 0.4A VCC = 125V
0.01 0.1 1 10
0.01 0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 9. Reverse Biased Safe Operating Area
10
Figure 10. Forward Biased Safe Operating Area
100
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
10
IC (Pulse) IC (DC)
1ms 5ms
500s
1
0.1
IB1=2A, RB2=0 VCC=50V, L=1mH
1 10 100 1000
TC = 25 C Single Pulse
0.01 1 10 100 1000
O
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 11. Power Derating
100 90
PC[W], POWER DISSIPATION
80 70 60 50 40 30 20 10 0 0 25 50
o
75
100
125
150
175
Tc[ C], CASE TEMPERATURE
4 FJP3305 Rev. B
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FJP3305 High Voltage Fast-Switching NPN Power Transistor
Mechanical Dimensions
TO-220
9.90 0.20
1.30 0.10 2.80 0.10
4.50 0.20
(8.70) o3.60 0.10
(1.70)
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
5 FJP3305 Rev. B
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FJP3305 High Voltage Fast-Switching NPN Power Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
6 FJP3305 Rev. B
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